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this is information on a product in full production. january 2016 docid025607 rev 3 1/16 STD30N10F7 n-channel 100 v, 0.02 typ., 32 a stripfet? f7 power mosfet in a dpak package datasheet ? production data figure 1. internal schematic diagram features ? among the lowest r ds(on) on the market ? excellent figure of merit (fom) ? low c rss /c iss ratio for emi immunity ? high avalanche ruggedness applications ? switching applications description this n-channel power mosfet utilizes stripfet? f7 technology with an enhanced trench gate structure that results in very low on- state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. $0y '7$% * 6 dpak 1 3 ta b order code v ds r ds(on) max i d p tot STD30N10F7 100 v 0.024 ? 32 a 50 w table 1. device summary order code marking package packing STD30N10F7 30n10f7 dpak tape and reel www.st.com
contents STD30N10F7 2/16 docid025607 rev 3 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4.1 dpak, STD30N10F7 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 6 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
docid025607 rev 3 3/16 STD30N10F7 electrical ratings 16 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v ds drain-source voltage 100 v v gs gate- source voltage 20 v i d drain current (continuous) at t c = 25 c 32 a i d drain current (continuous) at t c = 100 c 23 a i dm (1) 1. pulse width limited by safe operating area. drain current (pulsed) t c = 25 c 132 a p tot total dissipation at t c = 25 c 50 w t j operating junction temperature range -55 to 175 c t stg storage temperature range table 3. thermal data symbol parameter value unit r thj-pcb (1) 1. when mounted on 1 inch2 fr-4 board, 2 oz cu thermal resistance junction-pcb max 50 c/w r thj-case thermal resistance junction-case max 3 c/w
electrical characteristics STD30N10F7 4/16 docid025607 rev 3 2 electrical characteristics (t c = 25 c unless otherwise specified) table 4. on /off states symbol parameter test cond itions min. typ. max. unit v (br)dss drain-source breakdown voltage v gs = 0, i d = 250 a 100 v i dss zero gate voltage drain current v gs = 0, v ds = 100 v 1 a v gs = 0, v ds = 100 v, t c =125 c 100 a i gss gate-body leakage current v ds = 0, v gs = +20 v 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 2.5 4.5 v r ds(on) static drain-source on- resistance v gs = 10 v, i d = 16 a 0.02 0.024 ? table 5. dynamic symbol parameter test conditions min. typ. max. unit c iss input capacitance v ds = 50 v, f = 1 mhz, v gs = 0 - 1270 - pf c oss output capacitance - 290 -pf c rss reverse transfer capacitance - 24 -pf q g total gate charge v dd = 50 v, i d = 32 a, v gs = 10 v (see figure 14 ) -19-nc q gs gate-source charge - 9 - nc q gd gate-drain charge - 4.5 - nc table 6. switching times symbol parameter test conditions min. typ. max. unit t d(on) turn-on delay time v dd = 50 v, i d = 16 a, r g = 4.7 ? , v gs = 10 v (see figure 13 ) -12-ns t r rise time - 17.5 - ns t d(off) turn-off delay time - 22 - ns t f fall time - 5.6 - ns
docid025607 rev 3 5/16 STD30N10F7 electrical characteristics 16 table 7. source drain diode symbol parameter test conditions min. typ. max. unit v sd (1) 1. pulsed: pulse duration = 300 s, duty cycle 1.5%. forward on voltage i sd = 32 a, v gs = 0 - 1.1 v t rr reverse recovery time i sd = 32 a, di/dt = 100 a/s v dd = 80 v, t j =150 c (see figure 15 ) -41 ns q rr reverse recovery charge - 47 nc i rrm reverse recovery current - 2.3 a
electrical characteristics STD30N10F7 6/16 docid025607 rev 3 2.1 electrical charact eristics (curves) figure 2. safe operating area figure 3. thermal impedance i d 10 1 0.1 0.1 1 v ds (v) 10 (a) operation in this area is limited by max r ds(on) 100s 1ms 10ms 0.01 tj=175c tc = 2 5 c single pulse 100 am16172v1 single pulse =0.5 0.05 0.02 0.01 0.1 0.2 k 10 t p (s) -4 10 -3 10 -2 10 -1 10 -5 10 -3 10 -2 10 -1 10 0 c am16183v1 figure 4. output characteristics fi gure 5. transfer characteristics figure 6. gate charge vs gate-source voltage figure 7. static drain-source on-resistance i d 100 60 20 0 0 2 v ds (v) 4 (a) 6 5v 6v v gs =10v 40 80 7v 8v 9v 8 am16174v1 i d 80 40 0 0 4 v gs (v) 8 (a) 2 6 10 20 60 100 v ds =4v am16175v1 v gs 6 4 2 0 0 10 q g (nc) (v) 8 15 20 10 v dd =50v i d =32a 12 5 am16176v1 r ds(on) 19.00 18.50 18.00 0 20 i d (a) (m ) 10 30 19.50 v gs =10v 20.00 20.50 21.00 21.50 am16177v1
docid025607 rev 3 7/16 STD30N10F7 electrical characteristics 16 figure 8. capacitance variations figure 9. normalized gate threshold voltage vs temperature figure 10. normalized on-resistance vs temperature figure 11. normalized v (br)dss vs temperature figure 12. source-drain diode forward characteristics c 1200 400 200 0 0 20 v ds (v) (pf) 10 30 ciss coss crss 40 50 60 70 80 600 800 1000 1400 am16178v1 v gs(th) 0.6 0.4 0.2 0 -55 -5 t j (c) (norm) -30 0.8 70 20 45 95 i d =250a 120 1 1.2 145 am16179v1 r ds(on) 2 1 0 t j (c) (norm) 0.5 1.5 -55 -5 -30 70 20 45 95 120 v gs =10v am16180v1 v (br)dss t j (c) (norm) 0.96 0.97 0.98 0.99 1 1.01 1.02 1.03 i d =250 a 1.04 -55 -5 -30 70 20 45 95 120 am16181v1 v sd 0 10 i sd (a) (v) 5 25 15 20 0.5 0.6 0.7 0.8 t j =-55c t j =150c t j =25c 0.9 1 30 am16182v1
test circuits STD30N10F7 8/16 docid025607 rev 3 3 test circuits figure 13. switching times test circuit for resistive load figure 14. gate charge test circuit figure 15. test circuit for inductive load switching and diode recovery times figure 16. unclamped inductive load test circuit figure 17. unclamped inductive waveform figure 18. switching time waveform am01468v1 v gs p w v d r g r l d.u.t. 2200 f 3.3 f v dd am01469v1 v dd 47k 1k 47k 2.7k 1k 12v v i =20v=v gmax 2200 f p w i g =const 100 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 a a b b r g g fast diode d s l=100 h f 3.3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3.3 f v dd am01472v1 v (br)dss v dd v dd v d i dm i d am01473v1 v ds t on td on td off t off t f t r 90% 10% 10% 0 0 90% 90% 10% v gs
docid025607 rev 3 9/16 STD30N10F7 package information 16 4 package information in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions a nd product status are available at: www.st.com . ecopack ? is an st trademark.
package information STD30N10F7 10/16 docid025607 rev 3 4.1 dpak, STD30N10F7 figure 19. dpak (to-252) type a package outline b5hybw\shb$
docid025607 rev 3 11/16 STD30N10F7 package information 16 table 8. dpak (to-252) type a mechanical data dim. mm min. typ. max. a 2.20 2.40 a1 0.90 1.10 a2 0.03 0.23 b 0.64 0.90 b4 5.20 5.40 c 0.45 0.60 c2 0.48 0.60 d 6.00 6.20 d1 4.95 5.10 5.25 e 6.40 6.60 e1 4.60 4.70 4.80 e 2.16 2.28 2.40 e1 4.40 4.60 h9.35 10.10 l 1.00 1.50 (l1) 2.60 2.80 3.00 l2 0.65 0.80 0.95 l4 0.60 1.00 r0.20 v2 0 8
package information STD30N10F7 12/16 docid025607 rev 3 figure 20. dpak (to-252) footprint (a) a. all dimensions are in millimeters )35hy
docid025607 rev 3 13/16 STD30N10F7 packing information 16 5 packing information figure 21. tape for dpak (to-252) p1 a0 d1 p0 f w e d b0 k0 t user direction of feed p2 10 pitches cumulative tolerance on tape +/- 0.2 mm user direction of feed r bending radius b1 for machine ref. only including draft and radii concentric around b0 am08852v1 top cover tape
packing information STD30N10F7 14/16 docid025607 rev 3 figure 22. reel for dpak (to-252) table 9. dpak (to-252) tape and reel mechanical data tape reel dim. mm dim. mm min. max. min. max. a0 6.8 7 a 330 b0 10.4 10.6 b 1.5 b1 12.1 c 12.8 13.2 d1.5 1.6d20.2 d1 1.5 g 16.4 18.4 e 1.65 1.85 n 50 f 7.4 7.6 t 22.4 k0 2.55 2.75 p0 3.9 4.1 base qty. 2500 p1 7.9 8.1 bulk qty. 2500 p2 1.9 2.1 r40 t 0.25 0.35 w 15.7 16.3 a d b full radius g measured at hub c n reel dimensions 40mm min. access hole at sl ot location t tape slot in core for tape start 25 mm min. width am08851v2
docid025607 rev 3 15/16 STD30N10F7 revision history 16 6 revision history table 10. document revision history date revision changes 28-nov-2013 1 first release. 03-apr-2014 2 ? updated: figure 13,14,15 and figure 16 ? updated: section 4.1: dpak,STD30N10F7 ? minor text changes. 27-jan-2016 3 ? updated title ? updated section 2: electrical characteristics ? updated section 4: package information ? minor text changes.
STD30N10F7 16/16 docid025607 rev 3 important notice ? please read carefully stmicroelectronics nv and its subsidiaries (?st?) reserve the right to make changes, corrections, enhancements, modifications, and improvements to st products and/or to this document at any time without notice. purchasers should obtain the latest relevant in formation on st products before placing orders. st products are sold pursuant to st?s terms and conditions of sale in place at the time of o rder acknowledgement. purchasers are solely responsible for the choice, selection, and use of st products and st assumes no liability for application assistance or the design of purchasers? products. no license, express or implied, to any intellectual property right is granted by st herein. resale of st products with provisions different from the information set forth herein shall void any warranty granted by st for such product. st and the st logo are trademarks of st. all other product or service names are the property of their respective owners. information in this document supersedes and replaces information previously supplied in any prior versions of this document. ? 2016 stmicroelectronics ? all rights reserved

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